FQT2P25 — P-Channel QFET® MOSFET
FQT2P25
P-Channel QFET® MOSFET
-250 V, -0.55 A, 4.0 Ω
November 2013
Description
Thes...
FQT2P25 — P-Channel QFET® MOSFET
FQT2P25
P-Channel QFET® MOSFET
-250 V, -0.55 A, 4.0 Ω
November 2013
Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
Features
-0.55 A, -250 V, RDS(on) = 4.0 Ω (Max.) @ VGS = -10 V, ID = -0.275 A
Low Gate Charge (Typ. 6.5 nC) Low Crss (Typ. 6.5 pF) 100% Avalanche Tested
D
SOT-223
S D G
D
G
D
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
FQT2P25TF -250 -0.55 -0.35 -...