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FQS4410 Dataheets PDF



Part Number FQS4410
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Single N-Channel/ Logic Level/ Power MOSFET
Datasheet FQS4410 DatasheetFQS4410 Datasheet (PDF)

FQS4410 May 2000 QFET FQS4410 Single N-Channel, Logic Level, Power MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as.

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FQS4410 May 2000 QFET FQS4410 Single N-Channel, Logic Level, Power MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • 10A, 30V, RDS(on) = 0.0135Ω @VGS = 10 V Low gate charge ( typical 21 nC) Low Crss ( typical 145 pF) Fast switching Improved dv/dt capability 175°C maximum junction temperature rating 8 7 6 5 4 3 2 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQS4410 30 10 8 50 ± 20 7.0 2.5 0.02 -55 to +175 Units V A A A V V/ns W W/°C °C Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Linear Derating Factor Operating and Storage Temperature Range (Note 3) Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 50 Units °C/W ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Unit s Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 30 V, VGS = 0 V VDS = 24 V, TC = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 ------0.03 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 10 V, ID = 5 A (Note 4) 1.0 ---- ---16 2.5 0.0135 0.02 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---980 590 145 1280 770 190 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 24 V, ID = 10 A, VGS = 5 V VDD = 15 V, ID = 5 A, RG = 50 Ω (Note 4, 5) -----(Note 4, 5) 30 165 65 110 21 4.2 12 70 340 140 230 28 --- ns ns ns ns nC nC nC --- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 24 A, dIF / dt = 100 A/µs (Note 4) ------ ---45 45 2.3 50 1.1 --- A A V ns nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 10A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Typical Characteristics I D, Drain Current [A] 10 1 ID, Drain Current [A] VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : 10 1 150℃ 25℃ 10 0 ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ -55℃ 10 -1 ※ Note 1. VDS = 10V 2. 250μ s Pulse Test 10 -1 10 0 10 0 2.0 2.5 3.0 3.5 4.0 V DS , Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. Output Characteristics Figure 2. Transfer Characteristics 40 Drain-Source On-Resistance 30 I DR , Reverse Drain Current [A] VGS = 4.5V 10 1 R DS(ON) [mΩ ], VGS = 10V 20 10 0 10 150 ℃ -1 25 ℃ ※ Note : TJ = 25℃ ※ Note : 1. VGS = 0V 2. 250μ s Pulse Test 0 0 10 20 30 40 50 10 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 2500 10 VDS = 15V VDS = 24V V GS , Gate-Source Voltage [V] Coss 2000 8 Capacitance [pF] Ciss 1500 ※ Note ; 1. VGS = 0 V 2. f = 1 MHz 6 1000 Crss 4 500 2 ※ Note : ID = 10A 0 -1 10 0 10 0 10 1 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQS441.


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