Document
FQS4410
May 2000
QFET
FQS4410
Single N-Channel, Logic Level, Power MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products.
TM
Features
• • • • • • 10A, 30V, RDS(on) = 0.0135Ω @VGS = 10 V Low gate charge ( typical 21 nC) Low Crss ( typical 145 pF) Fast switching Improved dv/dt capability 175°C maximum junction temperature rating
8 7 6 5
4 3 2 1
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed
(Note 1)
FQS4410 30 10 8 50 ± 20 7.0 2.5 0.02 -55 to +175
Units V A A A V V/ns W W/°C °C
Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Linear Derating Factor Operating and Storage Temperature Range
(Note 3)
Thermal Characteristics
Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 50 Units °C/W
©2000 Fairchild Semiconductor International
Rev. A, May 2000
FQS4410
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Unit s
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 30 V, VGS = 0 V VDS = 24 V, TC = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 30 ------0.03 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 10 V, ID = 5 A
(Note 4)
1.0 ----
---16
2.5 0.0135 0.02 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---980 590 145 1280 770 190 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 24 V, ID = 10 A, VGS = 5 V VDD = 15 V, ID = 5 A, RG = 50 Ω
(Note 4, 5)
-----(Note 4, 5)
30 165 65 110 21 4.2 12
70 340 140 230 28 ---
ns ns ns ns nC nC nC
---
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 24 A, dIF / dt = 100 A/µs
(Note 4)
------
---45 45
2.3 50 1.1 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3mH, IAS = 10A, VDD = 15V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 10A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, May 2000
FQS4410
Typical Characteristics
I D, Drain Current [A]
10
1
ID, Drain Current [A]
VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top :
10
1
150℃ 25℃
10
0
※ Note : 1. 250μ s Pulse Test 2. TC = 25℃
-55℃
10
-1
※ Note 1. VDS = 10V 2. 250μ s Pulse Test
10 -1 10
0
10
0
2.0
2.5
3.0
3.5
4.0
V DS , Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
40
Drain-Source On-Resistance
30
I DR , Reverse Drain Current [A]
VGS = 4.5V
10
1
R DS(ON) [mΩ ],
VGS = 10V
20
10
0
10
150 ℃
-1
25 ℃
※ Note : TJ = 25℃
※ Note : 1. VGS = 0V 2. 250μ s Pulse Test
0 0 10 20 30 40 50
10
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current
Figure 4. Source-Drain Diode Forward Voltage
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
2500
10
VDS = 15V VDS = 24V
V GS , Gate-Source Voltage [V]
Coss
2000
8
Capacitance [pF]
Ciss
1500
※ Note ; 1. VGS = 0 V 2. f = 1 MHz
6
1000
Crss
4
500
2
※ Note : ID = 10A
0 -1 10
0 10
0
10
1
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
©2000 Fairchild Semiconductor International
Rev. A, May 2000
FQS441.