250V P-Channel MOSFET
FQPF9P25 — P-Channel QFET® MOSFET
FQPF9P25
P-Channel QFET® MOSFET
-250 V, -6 A, 620 mΩ
November 2013
Description
This...
Description
FQPF9P25 — P-Channel QFET® MOSFET
FQPF9P25
P-Channel QFET® MOSFET
-250 V, -6 A, 620 mΩ
November 2013
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
-6 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -3 A
Low Gate Charge (Typ. 29 nC)
Low Crss (Typ. 27 pF)
100% Avalanche Tested
S
G GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8” from case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
D
FQPF9P25 -250 -6.0 -3.9 -24 ± 30 650 -6.0 5.0 -5.5 50 0.4
-55 to +150
300
Thermal Characteristics
+θ +θ
Thermal Resistance, Junction-to-Case, Max. Thermal Resis...
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