Document
FQPF9P25 — P-Channel QFET® MOSFET
FQPF9P25
P-Channel QFET® MOSFET
-250 V, -6 A, 620 mΩ
November 2013
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• -6 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -3 A
• Low Gate Charge (Typ. 29 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
S
G GDS
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8” from case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
D
FQPF9P25 -250 -6.0 -3.9 -24 ± 30 650 -6.0 5.0 -5.5 50 0.4
-55 to +150
300
Thermal Characteristics
+θ +θ
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
FQPF9P25 2.5 -' &
Unit V A A A V mJ A mJ
V/ns W
W/°C °C °C
6? 6?
©2000 Fairchild Semiconductor Corporation
1
FQPF9P25 Rev. C0
www.fairchildsemi.com
FQPF9P25 — P-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQPF9P25
Top Mark FQPF9P25
Package TO-220F
Packing Method Reel Size
Tube
N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = -250 µA
-250 --
∆BVDSS Breakdown Voltage Temperature / ∆TJ Coefficient
ID = -250 µA, Referenced to 25°C -- -0.2
IDSS
Zero Gate Voltage Drain Current
VDS = -250 V, VGS = 0 V VDS = -200 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V
--
--
--
--
-1 -10 -100 100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA VGS = -10 V, ID = -3.0 A VDS = -40 V, ID = -3.0 A
-3.0 --
-5.0
V
-- 0.48 0.62
Ω
--
4.8
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V, f = 1.0 MHz
-- 910 1180 pF
-- 170 220
pF
--
27
35
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -125 V, ID = -9.4 A, RG = 25 Ω
--
20
50
ns
-- 150 310
ns
--
45 100
ns
(Note 4)
--
65 140
ns
VDS = -200 V, ID = -9.4 A,
--
29
38
nC
VGS = -10 V
--
7.6
--
nC
(Note 4)
--
14
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -6.0 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -9.4 A, dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 28.9 mH, IAS = -6.0 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -9.4 A, di/dt ≤ 300 A/µs , VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature.
--
--
-6.0
A
--
--
-24
A
--
--
-5.0
V
-- 190
--
ns
-- 1.45
--
µC
©2000 Fairchild Semiconductor Corporation
2
FQPF9P25 Rev. C0
www.fairchildsemi.com
FQPF9P25 — P-Channel QFET® MOSFET
Typical Characteristics
-ID, Drain Current [A]
DS(on) R [Ω], Drain-Source On-Resistance
VGS Top : -15.0 V
101
-10.0 V -8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
100
10-1 10-1
※ Notes : 1. 250μs Pulse Test 2. TC = 25℃
100
101
-VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
2.0
V = - 10V GS
1.5 V = - 20V
GS
1.0
0.5
※ Note : T = 25℃ J
0.0
0
10
20
30
40
-I , Drain Current [A] D
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
2400 2000
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
1600 1200 800 400
C
※ Notes :
iss
1. VGS = 0 V
C
2. f = 1 MHz
oss
Crss
0
10-1
100
101
-V , Drain-Source Voltage [V] DS
Figure 5. Capa.