FQPF8N60C — N-Channel QFET® MOSFET
FQPF8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
November 2013
Description
The...
FQPF8N60C — N-Channel QFET® MOSFET
FQPF8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
November 2013
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 12 pF)
100% Avalanche Tested
D
GDS
G
TO-220F
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RθJC RθJA
...