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FQPF6N90

Part Number	FQPF6N90
Manufacturer	Fairchild Semiconductor
Description	900V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQPF6N90 FQPF6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transis...
Datasheet	FQPF6N90 PDF File

Overview

FQPF6N90 FQPF6N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
Features • • • • • • 3.
4A, 900V, RDS(on) = 1.
9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Ser...

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