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FQPF65N06 Dataheets PDF



Part Number FQPF65N06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V N-Channel MOSFET
Datasheet FQPF65N06 DatasheetFQPF65N06 Datasheet (PDF)

FQPF65N06 — N-Channel QFET® MOSFET FQPF65N06 N-Channel QFET® MOSFET 60 V, 40 A, 16 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor cont.

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FQPF65N06 — N-Channel QFET® MOSFET FQPF65N06 N-Channel QFET® MOSFET 60 V, 40 A, 16 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. November 2013 Features • 40 A, 60 V, RDS(on) = 16 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 100 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FQPF65N06 60 40 28.3 160 ± 25 645 40 5.6 7.0 56 0.37 -55 to +175 300 FQPF65N06 2.66 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2001 Fairchild Semiconductor Corporation FQPF65N06 Rev. C1 1 www.fairchildsemi.com FQPF65N06 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQPF65N06 Top Mark FQPF65N06 Package Packing Method TO-220F Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted. Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient IDSS Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 μA ID = 250 μA, Referenced to 25°C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 60 -- ----- -- 0.07 ----- -- -- 1 10 100 -100 V V/°C μA μA nA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VDS = VGS, ID = 250 μA VGS = 10 V, ID = 20 A VDS = 25 V, ID = 20 A 2.0 -- 4.0 -- 0.0125 0.016 -- 40 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1850 2410 pF -- 700 910 pF -- 100 130 pF Switching Characteristics td(on) Turn-On Delay Time t.


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