Document
FQPF65N06 — N-Channel QFET® MOSFET
FQPF65N06
N-Channel QFET® MOSFET
60 V, 40 A, 16 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
November 2013
Features
• 40 A, 60 V, RDS(on) = 16 mΩ (Max.) @ VGS = 10 V, ID = 20 A
• Low Gate Charge (Typ. 48 nC) • Low Crss (Typ. 100 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating
D
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
FQPF65N06 60 40 28.3 160 ± 25 645 40 5.6 7.0 56 0.37
-55 to +175
300
FQPF65N06 2.66 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Unit °C/W °C/W
©2001 Fairchild Semiconductor Corporation FQPF65N06 Rev. C1
1
www.fairchildsemi.com
FQPF65N06 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQPF65N06
Top Mark FQPF65N06
Package Packing Method
TO-220F
Tube
Reel Size N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF IGSSR
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V
60
--
-----
--
0.07
-----
--
--
1 10 100 -100
V
V/°C
μA μA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 20 A
VDS = 25 V, ID = 20 A
2.0 --
4.0
-- 0.0125 0.016
-- 40
--
V Ω S
Dynamic Characteristics
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1850 2410 pF -- 700 910 pF -- 100 130 pF
Switching Characteristics
td(on)
Turn-On Delay Time
t.