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FQPF3N90

Fairchild Semiconductor
Part Number FQPF3N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQPF3N90 September 2000 QFET FQPF3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power...
Datasheet PDF File FQPF3N90 PDF File

FQPF3N90
FQPF3N90

Overview
FQPF3N90 September 2000 QFET FQPF3N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 2.
1A, 900V, RDS(on) = 4.
25 Ω @ VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 8.
0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD...


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