FQPF17P10

FQPF17P10 QFET FQPF17P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features -10.5A, -100V, RDS(on) = 0.19Ω @VGS = -10 V Low gate charge ( typical 30 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G GD S TO-220F FQPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF17P10 -100 -10.5 -7.4 -42 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 580 -10.5 4.1 -6.0 41 0.27 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8...