60V LOGIC N-Channel MOSFET
FQPF13N06L — N-Channel QFET® MOSFET
FQPF13N06L
N-Channel QFET® MOSFET
60 V, 10 A, 110 mΩ
Description
This N-Channel enh...
Description
FQPF13N06L — N-Channel QFET® MOSFET
FQPF13N06L
N-Channel QFET® MOSFET
60 V, 10 A, 110 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
November 2013
Features
10 A, 60 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 5 A
Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 17 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating
D
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max...
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