60V P-Channel MOSFET
FQPF11P06 P-Channel MOSFET
FQPF11P06
P-Channel QFET® MOSFET
-60 V, -8.6 A, 175 mΩ
March 2013
Description
This P-Chann...
Description
FQPF11P06 P-Channel MOSFET
FQPF11P06
P-Channel QFET® MOSFET
-60 V, -8.6 A, 175 mΩ
March 2013
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
-8.6 A, -60 V, RDS(on)=175 mΩ(Max.) @VGS=-10 V, ID=-4.3 A Low Gate Charge (Typ. 13 nC) Low Crss (Typ. 45 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating
S
!
GD S
TO-220F
G!
● ●
▶▲
●
!
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQPF11P06 -60 -8.6 -6.08 -34.4 ± 25 160 -8.6 3.0 -7.0 30 0.2
-55 to +175
300
Thermal Characteristics
Symbol RθJC RθJA...
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