Document
FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
FQP10N20C / FQPF10N20C
N-Channel QFET® MOSFET
200 V, 9.5 A, 360 mΩ
November 2013
Features
• 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
• Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
GDS
TO-220
GDS
TO-220F
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
Parameter
Drain to Source Voltage Drain Current Drain Current
-Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max
FQP10N20C FQPF10N20C
200
9.5
9.5 *
6.0
6.0 *
38
38 *
± 30
210
9.5
7.2
5.5
72
38
0.57
0.3
-55 to +150
300
FQP10N20C 1.74 62.5
FQPF10N20C 3.33 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Unit °C/W °C/W
©2003 Fairchild Semiconductor Corporation
1
FQP10N20C / FQPF10N20C Rev. C1
www.fairchildsemi.com
FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Device Marking FQP10N20C FQPF10N20C
Device FQP10N20C FQPF10N20C
Package TO-220 TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Reel Size Tube Tube
Tape Width N/A N/A
Quantity 50 units 50 units
Min
Typ
Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
200
ΔBVDSS Breakdown Voltage Temperature Coeffi/ ΔTJ cient
ID = 250 μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C
---
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 μA
2.0
VGS = 10 V, ID = 4.75 A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 4.75 A
--
Dynamic Characteristics
Ciss Coss
Input Capacitance Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on) tr
Turn-On Delay Time Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 9.5 A, RG = 25 Ω
---
--
(Note 4)
--
VDS = 160 V, ID = 9.5 A,
--
VGS = 10 V
--
(Note 4)
--
--
--
V
0.28
--
V/°C
--
10
μA
--
100
μA
--
100
nA
--
-100
nA
--
4.0
V
0.29 0.36
Ω
5.5
--
S
395
510
pF
97
125
pF
40.5
53
pF
11
30
ns
92
190
ns
70
150
ns
72
160
ns
20
26
nC
3.1
--
nC
10.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 9.5 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 9.5 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 3.5 mH, IAS = 9.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9.5 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature.
--
--
9.5
A
--
--
38
A
--
--
1.5
V
--
158
--
ns
--
0.97
--
μC
©2003 Fairchild Semiconductor Corporation
2
FQP10N20C / FQPF10N20C Rev. C1
www.fairchildsemi.com
FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
Top :
VGS 15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1 10-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
1.0
VGS = 10V
0.5
VGS = 20V
※ Note : TJ = 25℃
0.0
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Cur.