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FQPF10N20C Dataheets PDF



Part Number FQPF10N20C
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 200V N-Channel MOSFET
Datasheet FQPF10N20C DatasheetFQPF10N20C Datasheet (PDF)

FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET FQP10N20C / FQPF10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ November 2013 Features • 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to.

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FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET FQP10N20C / FQPF10N20C N-Channel QFET® MOSFET 200 V, 9.5 A, 360 mΩ November 2013 Features • 9.5 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GDS TO-220 GDS TO-220F G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max FQP10N20C FQPF10N20C 200 9.5 9.5 * 6.0 6.0 * 38 38 * ± 30 210 9.5 7.2 5.5 72 38 0.57 0.3 -55 to +150 300 FQP10N20C 1.74 62.5 FQPF10N20C 3.33 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2003 Fairchild Semiconductor Corporation 1 FQP10N20C / FQPF10N20C Rev. C1 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Package Marking and Ordering Information Device Marking FQP10N20C FQPF10N20C Device FQP10N20C FQPF10N20C Package TO-220 TO-220F Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Reel Size Tube Tube Tape Width N/A N/A Quantity 50 units 50 units Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 200 ΔBVDSS Breakdown Voltage Temperature Coeffi/ ΔTJ cient ID = 250 μA, Referenced to 25°C -- IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C --- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 μA 2.0 VGS = 10 V, ID = 4.75 A -- gFS Forward Transconductance VDS = 40 V, ID = 4.75 A -- Dynamic Characteristics Ciss Coss Input Capacitance Output Capacitance VDS = 25 V, VGS = 0 V, -- f = 1.0 MHz -- Crss Reverse Transfer Capacitance -- Switching Characteristics td(on) tr Turn-On Delay Time Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 9.5 A, RG = 25 Ω --- -- (Note 4) -- VDS = 160 V, ID = 9.5 A, -- VGS = 10 V -- (Note 4) -- -- -- V 0.28 -- V/°C -- 10 μA -- 100 μA -- 100 nA -- -100 nA -- 4.0 V 0.29 0.36 Ω 5.5 -- S 395 510 pF 97 125 pF 40.5 53 pF 11 30 ns 92 190 ns 70 150 ns 72 160 ns 20 26 nC 3.1 -- nC 10.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A trr Reverse Recovery Time VGS = 0 V, IS = 9.5 A, Qrr Reverse Recovery Charge dIF / dt = 100 A/μs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 3.5 mH, IAS = 9.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 9.5 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. -- -- 9.5 A -- -- 38 A -- -- 1.5 V -- 158 -- ns -- 0.97 -- μC ©2003 Fairchild Semiconductor Corporation 2 FQP10N20C / FQPF10N20C Rev. C1 www.fairchildsemi.com FQP10N20C / FQPF10N20C — N-Channel QFET® MOSFET Typical Characteristics ID, Drain Current [A] DS(ON) R [Ω ], Drain-Source On-Resistance Top : VGS 15.0 V 10.0 V 8.0 V 101 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 100 10-1 10-1 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 100 101 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics 1.5 1.0 VGS = 10V 0.5 VGS = 20V ※ Note : TJ = 25℃ 0.0 0 5 10 15 20 25 30 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Cur.


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