250V P-Channel MOSFET
FQP9P25 — P-Channel QFET® MOSFET
October 2013
FQP9P25
P-Channel QFET® MOSFET
-250 V, -9.4 A, 620 mΩ
Description
This ...
Description
FQP9P25 — P-Channel QFET® MOSFET
October 2013
FQP9P25
P-Channel QFET® MOSFET
-250 V, -9.4 A, 620 mΩ
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
-9.4 A, -250 V, RDS(on) = 0.62 Ω (Max.)@VGS = -10 V, ID = -4.7 A
Low gate charge ( typ. 29 nC) Low Crss ( typ. 27 pF) 100% avalanche tested
S
G
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
D
FQP9P25 -250 -9.4 -5.9 ...
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