These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th.
•
•
•
•
•
•
• 9.3A, 80V, RDS(on) = 0.21Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 13 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
!
"
G
G! DS
! "
" "
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP9N08 80 9.3 6.57 37.2 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ.
Similar Product
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | FQP9N08L |
Fairchild Semiconductor |
80V LOGIC N-Channel MOSFET | |
2 | FQP9N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
3 | FQP9N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
4 | FQP9N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
5 | FQP9N30 |
ON Semiconductor |
N-Channel MOSFET |