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FQP85N06 Dataheets PDF



Part Number FQP85N06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V N-Channel MOSFET
Datasheet FQP85N06 DatasheetFQP85N06 Datasheet (PDF)

FQP85N06 May 2001 QFET FQP85N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC c.

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FQP85N06 May 2001 QFET FQP85N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typical 86 nC) Low Crss ( typical 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed FQP85N06 60 (Note 6) Units V A A A V mJ A mJ V/ns W W/°C °C °C 85 60 300 ± 25 810 85 16.0 7.0 160 1.07 -55 to +175 300 (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 2) (Note 1) (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 0.94 -62.5 Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQP85N06 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 60 ------0.06 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID =42.5 A VDS = 25 V, ID = 42.5 A (Note 4) 2.0 --- -0.008 54 4.0 0.010 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---3170 1150 165 4120 1500 220 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 85 A, VGS = 10 V (Note 4, 5) VDD = 30 V, ID = 42.5 A, RG = 25 Ω (Note 4, 5) -------- 40 230 175 170 86 20.5 36 90 470 360 350 112 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 85 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 85 A, dIF / dt = 100 A/µs (Note 4) ------ ---70 135 85 300 1.5 --- A A V ns nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 130µH, IAS = 85A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 85A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQP85N06 Typical Characteristics 10 2 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 2 10 1 10 1 175℃ 25℃ -55℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test 10 -1 10 0 10 0 10 1 10 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.015 Drain-Source On-Resistance 0.012 10 2 0.009 VGS = 20V 0.006 IDR, Reverse Drain Current [A] VGS = 10V R DS(ON) [ Ω ], 10 1 0.003 ※ Note : T = 25℃ J 175℃ 0 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.000 0 50 100 150 200 250 300 350 10 ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variatio.


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