Document
FQP5N50C/FQPF5N50C
QFET
FQP5N50C/FQPF5N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TM
Features
• • • • • • 5A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
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◀
▲
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G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP5N50C 500 5 2.9 20
FQPF5N50C 5* 2.9 * 20 * ± 30 300 5 7.3 4.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
73 0.58 -55 to +150 300
38 0.3
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP5N50C 1.71 0.5 62.5 FQPF5N50C 3.31 -62.5 Units °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
FQP5N50C/FQPF5N50C
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.5 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.5A VDS = 40 V, ID = 2.5A
(Note 4)
2.0 ---
-1.14 5.2
4.0 1.4 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---480 80 15 625 105 20 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 5A, VGS = 10 V
(Note 4, 5)
VDD = 250 V, ID = 5A, RG = 25 Ω
(Note 4, 5)
--------
12 46 50 48 18 2.2 9.7
35 100 110 105 24 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 5 A, dIF / dt = 100 A/µs
(Note 4)
------
---263 1.9
5 20 1.4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21.5 mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
FQP5N50C/FQPF5N50C
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
1
150 C 25 C
10
0
o
10
0
o
-55 C
o
10
-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test
10 10
-1
-1
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
4.5 4.0
1
10
RDS(ON) [Ω ], Drain-Source On-Resistance
3.0 2.5 2.0
IDR, Reverse Drain Current [A]
3.5
VGS = 10V
10
0
VGS = 20V
1.5 1.0 0.5 0 5 10 15
150℃ 25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
※ Note : TJ = 25℃
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
1200.