Document
FQP50N06L — N-Channel QFET® MOSFET
FQP50N06L
N-Channel QFET® MOSFET
60 V, 52.4 A, 21 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
November 2013
Features
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A
• Low Gate Charge (Typ. 24.5 nC) • Low Crss (Typ. 90 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
S
FQP50N06L 60 52.4 37.1 210 ± 20 990 52.4 12.1 7.0 121 0.81
-55 to +175 300
FQP50N06L 1.24 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Unit °C/W °C/W
©2001 Fairchild Semiconductor Corporation
1
FQP50N06L Rev. C1
www.fairchildsemi.com
FQP50N06L — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQP50N06L
Top Mark FQP50N06L
Package Packing Method
TO-220
Tube
Reel Size N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
60
ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C --
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150°C
---
IGSSF
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
0.06
-----
--
--
1 10 100 -100
V
V/°C
μA μA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA VGS = 10 V, ID = 26.2 A VGS = 5 V, ID =26.2 A VDS = 25 V, ID = 26.2 A
1.0 --
2.5
V
-- 0.017 0.021 -- 0.020 0.025
Ω
--
40
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 1250 1630 pF
-- 445 580
pF
--
90
120
pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 30 V, ID = 26.2 A, RG = 25 Ω
--
20
50
ns
-- 380 770
ns
--
80 170
ns
(Note 4)
--
145
300
ns
VDS = 48 V, ID = 52.4 A,
-- 24.5 32
nC
VGS = 5 V
--
6
--
nC
(Note 4) --
14.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 52.4 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 52.4 A, dIF / dt = 100 A/μs
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 300 μH, IAS = 52.4 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 52.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature.
--
--
52.4
A
--
--
210
A
--
--
1.5
V
--
65
--
ns
-- 125
--
nC
©2001 Fairchild Semiconductor Corporation
2
FQP50N06L Rev. C1
www.fairchildsemi.com
FQP50N06L — N-Channel QFET® MOSFET
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [m Ω ], Drain-Source On-Resistance
Top: 10.V0GVS
102
8.0 V 6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
101
100 10-1
※ Notes : 1. 250μs PulseTest 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
60
50
40 VGS = 5V
30
VGS = 10V
20
10
※ Note : TJ = 25℃
0
0
25
50
75
100 125 150 175 200
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
4000
3000
Coss Ciss 2000
1000
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
※ Notes :
1. 2.
fV=GS1=M0HVz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Cap.