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FQP50N06L Dataheets PDF



Part Number FQP50N06L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V LOGIC N-Channel MOSFET
Datasheet FQP50N06L DatasheetFQP50N06L Datasheet (PDF)

FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor co.

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FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. November 2013 Features • 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A • Low Gate Charge (Typ. 24.5 nC) • Low Crss (Typ. 90 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. S FQP50N06L 60 52.4 37.1 210 ± 20 990 52.4 12.1 7.0 121 0.81 -55 to +175 300 FQP50N06L 1.24 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2001 Fairchild Semiconductor Corporation 1 FQP50N06L Rev. C1 www.fairchildsemi.com FQP50N06L — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQP50N06L Top Mark FQP50N06L Package Packing Method TO-220 Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted. Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA 60 ΔBVDSS Breakdown Voltage Temperature / ΔTJ Coefficient ID = 250 μA, Referenced to 25°C -- IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150°C --- IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- 0.06 ----- -- -- 1 10 100 -100 V V/°C μA μA nA nA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance VDS = VGS, ID = 250 μA VGS = 10 V, ID = 26.2 A VGS = 5 V, ID =26.2 A VDS = 25 V, ID = 26.2 A 1.0 -- 2.5 V -- 0.017 0.021 -- 0.020 0.025 Ω -- 40 -- S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1250 1630 pF -- 445 580 pF -- 90 120 pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 30 V, ID = 26.2 A, RG = 25 Ω -- 20 50 ns -- 380 770 ns -- 80 170 ns (Note 4) -- 145 300 ns VDS = 48 V, ID = 52.4 A, -- 24.5 32 nC VGS = 5 V -- 6 -- nC (Note 4) -- 14.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 52.4 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 52.4 A, dIF / dt = 100 A/μs Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 300 μH, IAS = 52.4 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 52.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. -- -- 52.4 A -- -- 210 A -- -- 1.5 V -- 65 -- ns -- 125 -- nC ©2001 Fairchild Semiconductor Corporation 2 FQP50N06L Rev. C1 www.fairchildsemi.com FQP50N06L — N-Channel QFET® MOSFET Typical Characteristics ID, Drain Current [A] DS(ON) R [m Ω ], Drain-Source On-Resistance Top: 10.V0GVS 102 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V 101 100 10-1 ※ Notes : 1. 250μs PulseTest 2. TC = 25℃ 100 101 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics 60 50 40 VGS = 5V 30 VGS = 10V 20 10 ※ Note : TJ = 25℃ 0 0 25 50 75 100 125 150 175 200 ID, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4000 3000 Coss Ciss 2000 1000 Crss CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted) ※ Notes : 1. 2. fV=GS1=M0HVz 0 10-1 100 101 VDS, Drain-Source Voltage [V] Figure 5. Cap.


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