FQP4N20L — N-Channel QFET® MOSFET
FQP4N20L
N-Channel QFET® MOSFET
200 V, 3.8 A, 1.35 Ω
October 2013
Description
These...
FQP4N20L — N-Channel QFET® MOSFET
FQP4N20L
N-Channel QFET® MOSFET
200 V, 3.8 A, 1.35 Ω
October 2013
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
Features
3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A Low Gate Charge (Typ. 4.0 nC) Low Crss (Typ. 6.0 pF) 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Parameter Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ. Thermal Resistance, Junc...