Document
FQP30N06
QFET
FQP30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
• • • • • • • 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 40 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP30N06 60 30 21.3 120 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
280 30 7.9 7.0 79 0.53 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 1.90 -62.5 Units °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A2, March 2003
FQP30N06
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 60 ------0.06 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 15 A VDS = 25 V, ID = 15 A
(Note 4)
2.0 ---
-0.031 16
4.0 0.04 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---725 270 40 945 350 52 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 30 A, VGS = 10 V
(Note 4, 5)
VDD = 30 V, ID = 15 A, RG = 25 Ω
(Note 4, 5)
--------
10 85 35 40 19 5.4 8.5
30 180 80 90 25 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 30 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 30 A, dIF / dt = 100 A/µs
(Note 4)
------
---45 65
30 120 1.5 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 360µH, IAS = 30A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 30A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A2, March 2003
FQP30N06
Typical Characteristics
10
2
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
2
ID, Drain Current [A]
ID, Drain Current [A]
10
1
10
1
175℃ 25℃ -55℃
※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
10 -1 10
0
10
0
10
1
10
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
10
2
80
Drain-Source On-Resistance
60
VGS = 10V VGS = 20V
IDR, Reverse Drain Current [A]
R DS(ON) [mΩ ],
10
1
40
20
※ Note : TJ = 25℃
175℃
25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
0 0 20 40 60 80 100 120
10
0
ID, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 30V VDS = 48V
V GS , Gate-Source Voltage [.