200V N-Channel MOSFET
FQP19N20 — N-Channel QFET® MOSFET
FQP19N20
N-Channel QFET® MOSFET
200 V, 19.4 A, 150 mΩ
Description
This N-Channel enha...
Description
FQP19N20 — N-Channel QFET® MOSFET
FQP19N20
N-Channel QFET® MOSFET
200 V, 19.4 A, 150 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
November 2013
Features
19.4 A, 200 V, RDS(on) = 150 mΩ (Max.) @ VGS = 10 V, ID = 9.7 A
Low Gate Charge (Typ. 31 nC) Low Crss (Typ. 30 pF) 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
S
FQP19N20 200 19.4 12.3 78 ± 30 250 19.4 14 5.5 1...
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