FQP13N10L

FQP13N10L — N-Channel QFET® MOSFET FQP13N10L N-Channel QFET® MOSFET 100 V, 12.8 A, 180 mΩ December 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features 12.8 A, 100 V, RDS(on) = 180 mΩ (Max.) @ VGS = 10 V, ID = 6.4 A Low Gate Charge (Typ. 8.7 nC) Low Crss (Typ. 20 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds. (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) S FQP13N10L 100 12.8 9.05 51.2  20 95 12.8 6.5 6.0 65 0.43 -55 to +175 300 Thermal Characteristics  +θ +θ   Ther...