500V N-Channel MOSFET
FQL40N50 — N-Channel QFET® MOSFET
FQL40N50
N-Channel QFET® MOSFET
500 V, 40 A, 110 mΩ
November 2013
Description
This ...
Description
FQL40N50 — N-Channel QFET® MOSFET
FQL40N50
N-Channel QFET® MOSFET
500 V, 40 A, 110 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A
Low Gate Charge (Typ. 155 nC)
Low Crss (Typ. 95 pF)
100% Avalanche Tested
D
GDS
TO-264
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8" from case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
G
S
FQL40N50 500 40 25 160 ± 30 1780 40 46 4.5 460 3.7
-55 to +150 300
Thermal Characteristics
+θ +θ
Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-A...
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