600V N-Channel MOSFET
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
May 2014
FQB7N60 / FQI7N60
N-Channel QFET® MOSFET
600 V, 7.4 A, 1.0 Ω
Desc...
Description
FQB7N60 / FQI7N60 — N-Channel QFET® MOSFET
May 2014
FQB7N60 / FQI7N60
N-Channel QFET® MOSFET
600 V, 7.4 A, 1.0 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
7.4 A, 600 V, RDS(on) = 1.0 Ω (Max.) @VGS = 10 V, ID = 3.7 A
Low Gate Charge (Typ. 29 nC) Low Crss (Typ. 16 pF) 100% Avalanche Tested
D
D
G S
D2-PAK
GDS
I2-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
S
FQB7N60TM FQB7N60TM_WS
FQI7N60TU 600 7.4 4.7 29.6 ±30 580 7.4 14.2 4.5 3.13 142 1.14
-55 to +150
300
Unit
V A A A V mJ A mJ V/ns W ...
Similar Datasheet