DatasheetsPDF.com

FQI7N10L Dataheets PDF



Part Number FQI7N10L
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 100V LOGIC N-Channel MOSFET
Datasheet FQI7N10L DatasheetFQI7N10L Datasheet (PDF)

FQB7N10L / FQI7N10L December 2000 QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications.

  FQI7N10L   FQI7N10L



Document
FQB7N10L / FQI7N10L December 2000 QFET FQB7N10L / FQI7N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. D TM Features • • • • • • • • 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 4.6 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirments allowing direct operationfrom logic drives D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB7N10L / FQI7N10L 100 7.3 5.15 29.2 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 50 7.3 4.0 6.0 3.75 40 0.27 -55 to +175 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 3.75 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000 FQB7N10L / FQI7N10L Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 100 ------0.1 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.65 A VGS = 5 V, ID = 3.65 A VDS = 30 V, ID = 3.65 A (Note 4) 1.0 --- -0.275 0.300 5.0 2.0 0.35 0.38 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---220 55 12 290 72 15 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 7.3 A, VGS = 5 V (Note 4, 5) VDD = 50 V, ID = 7.3 A, RG = 25 Ω (Note 4, 5) -------- 9 100 17 50 4.6 1.0 2.6 30 210 45 110 6.0 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 7.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 7.3 A, dIF / dt = 100 A/µs (Note 4) ------ ---70 140 7.3 29.2 1.5 --- A A V ns nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.4mH, IAS = 7.3A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International Rev. A2, December 2000 FQB7N10L / FQI7N10L Typical Characteristics 10 1 ID, Drain Current [A] ID , Drain Current [A] VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V Top : 10 1 175℃ 10 0 10 0 25℃ -55℃ ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -1 10 -1 10 0 10 1 10 -1 0 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 IDR , Reverse Drain Current [A] 1.2 10 1 VGS = 5V RDS(ON) [Ω ], Drain-Source On-Resistance 0.9 VGS = 10V 0.6 10 0 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.3 ※ Note : TJ = 25℃ 0.0 0 5 10 15 20 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID, Drain Curren.


FQI7N10 FQI7N10L FQI7N20


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)