Document
FQI4N90 — N-Channel QFET® MOSFET
FQI4N90
N-Channel QFET® MOSFET
900 V, 4.2 A, 3.3 Ω
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A
• Low Gate Charge (Typ. 24 nC)
• Low Crss (Typ. 9.5 pF)
• 100% Avalanche Tested
D
GDS
I2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering, 1/8” from case for 5 seconds.
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
FQI4N90TU 900 4.2 2.65 16.8 ± 30 570 4.2 14 4.0 3.13 140 1.12
-55 to +150
300
Unit V A A A V mJ A mJ V W W
W/°C °C
°C
Thermal Characteristics
Symbol
Parameter
RJC RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQI4N90TU 0.89 62.5 40
Unit oC/W
©2010 Fairchild Semiconductor Corporation
1
FQI4N90 Rev. C1
www.fairchildsemi.com
FQI4N90 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQI4N90TU
Top Mark FQI4N90
Package I2-PAK
Packing Method Reel Size
Tube
N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
900 --
∆BVDSS Breakdown Voltage Temperature / ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
0.9
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10 100 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.1 A
VDS = 50 V, ID = 2.1 A
3.0 --
5.0
V
-- 2.7 3.3
Ω
-- 3.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 860 1100 pF
--
90
120
pF
-- 9.5 12.5 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 4.2 A, RG = 25 Ω
--
25
60
ns
--
70 150
ns
--
45 100
ns
(Note 4)
--
40
90
ns
VDS = 720 V, ID = 4.2 A,
--
24
30
nC
VGS = 10 V
-- 5.8
--
nC
(Note 4) --
11.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.2 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 4.2 A, dIF / dt = 100 A/µs
Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 61 mH, IAS = 4.2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.2 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
4.2
A
--
--
16.8
A
--
--
1.4
V
-- 440
--
ns
-- 3.3
--
µC
©2010 Fairchild Semiconductor Corporation
2
FQI4N90 Rev. C1
www.fairchildsemi.com
FQI4N90 — N-Channel QFET® MOSFET
Typical Characteristics
ID, Drain Current [A]
DS(on) R [Ω], Drain-Source On-Resistance
101 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V
Bottom : 5.5 V
100
10-1 10-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
8 VGS = 10V
6
VGS = 20V
4
2
※ Note : TJ = 25℃
0
0
3
6
9
12
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
1500 1200 900 600 300
Ciss Coss Crss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
※ Notes : 1. VGS = 0 V 2. f = 1 MHz
0
10-1
100
101
VDS, Dr.