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FQI4N90 Dataheets PDF



Part Number FQI4N90
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 900V N-Channel MOSFET
Datasheet FQI4N90 DatasheetFQI4N90 Datasheet (PDF)

FQI4N90 — N-Channel QFET® MOSFET FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power fac.

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FQI4N90 — N-Channel QFET® MOSFET FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 24 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8” from case for 5 seconds. (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FQI4N90TU 900 4.2 2.65 16.8 ± 30 570 4.2 14 4.0 3.13 140 1.12 -55 to +150 300 Unit V A A A V mJ A mJ V W W W/°C °C °C Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. FQI4N90TU 0.89 62.5 40 Unit oC/W ©2010 Fairchild Semiconductor Corporation 1 FQI4N90 Rev. C1 www.fairchildsemi.com FQI4N90 — N-Channel QFET® MOSFET Package Marking and Ordering Information Part Number FQI4N90TU Top Mark FQI4N90 Package I2-PAK Packing Method Reel Size Tube N/A Tape Width N/A Quantity 50 units Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted. Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 900 -- ∆BVDSS Breakdown Voltage Temperature / ∆TJ Coefficient ID = 250 µA, Referenced to 25°C -- 0.9 IDSS Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125°C -- -- -- -- IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -- -- 10 100 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.1 A VDS = 50 V, ID = 2.1 A 3.0 -- 5.0 V -- 2.7 3.3 Ω -- 3.5 -- S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 860 1100 pF -- 90 120 pF -- 9.5 12.5 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 450 V, ID = 4.2 A, RG = 25 Ω -- 25 60 ns -- 70 150 ns -- 45 100 ns (Note 4) -- 40 90 ns VDS = 720 V, ID = 4.2 A, -- 24 30 nC VGS = 10 V -- 5.8 -- nC (Note 4) -- 11.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 4.2 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.2 A, dIF / dt = 100 A/µs Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 61 mH, IAS = 4.2 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 4.2 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. -- -- 4.2 A -- -- 16.8 A -- -- 1.4 V -- 440 -- ns -- 3.3 -- µC ©2010 Fairchild Semiconductor Corporation 2 FQI4N90 Rev. C1 www.fairchildsemi.com FQI4N90 — N-Channel QFET® MOSFET Typical Characteristics ID, Drain Current [A] DS(on) R [Ω], Drain-Source On-Resistance 101 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 10-1 10-1 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 100 101 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics 10 8 VGS = 10V 6 VGS = 20V 4 2 ※ Note : TJ = 25℃ 0 0 3 6 9 12 ID , Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1500 1200 900 600 300 Ciss Coss Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 0 10-1 100 101 VDS, Dr.


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