FQI27N25

FQI27N25 — N-Channel QFET® MOSFET FQI27N25 N-Channel QFET® MOSFET 250 V, 25.5 A, 110 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 25.5 A, 250 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 12.75 A Low Gate Charge (Typ. 50 nC) Low Crss (Typ. 45 pF) 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.  *
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