FQD6P25 / FQU6P25
April 2000
QFET
FQD6P25 / FQU6P25
250V P-Channel MOSFET
General Description
These P-Channel enhancem...
FQD6P25 / FQU6P25
April 2000
QFET
FQD6P25 / FQU6P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
TM
Features
-4.7A, -250V, RDS(on) = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D G! G S
S
!
D-PAK
FQD Series
I-PAK
G D S
FQU Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD6P25 / FQU6P25 -250 -4.7 -3.0 -18.8 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
540 -4.7 5.5 -5.5 2.5 55 0.44 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8fro...