FQD5P20

FQD5P20 / FQU5P20 May 2000 QFET FQD5P20 / FQU5P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Features -3.7A, -200V, RDS(on) = 1.4Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD5P20 / FQU5P20 -200 -3.7 -2.34 -14.8 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 330 -3.7 4.5 -5.5 2.5 45 0.36 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal...