Document
FQD5N15 — N-Channel QFET® MOSFET
FQD5N15
N-Channel QFET® MOSFET
150 V, 4.3 A, 800 mΩ
November 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A
• Low Gate Charge (Typ. 5.4 nC) • Low Crss (Typ. 7.5 pF) • 100% Avalanche Tested
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Absolute Maximum Ratings TC = 25oC unless otherwise noted.
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Thermal Characteristics
Symbol
Parameter
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Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
FQD5N15TM 4.17 110 50
Unit oC/W
©2000 Fairchild Semiconductor Corporation
1
FQD5N15 Rev. C0
www.fairchildsemi.com
FQD5N15 — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQD5N15TM
Top Mark FQD5N15
Package D-PAK
Packing Method Reel Size Tape and Reel 330 mm
Tape Width 16 mm
Quantity 2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
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1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 4.96 mH, IAS = 4.3 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 5.4 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature.
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©2000 Fairchild Semiconductor Corporation
2
FQD5N15 Rev. C0
www.fairchildsemi.com
FQD5N15 — N-Channel QFET® MOSFET
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