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FQD1N80

Part Number	FQD1N80
Manufacturer	Fairchild Semiconductor
Description	800V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description These N-Channel enhancemen...
Datasheet	FQD1N80 PDF File

Overview

FQD1N80 / FQU1N80 May 2001 QFET FQD1N80 / FQU1N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM Features • • • • • • 1.
0A, 800V, RDS(on) = 20Ω @VGS = 10 V Low gate charge ( typical 5.
5nC) Low Crss ( typical 2.
7pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ...

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