FQD19N10L

FQD19N10L — N-Channel QFET® MOSFET FQD19N10L N-Channel QFET® MOSFET 100 V, 15.6 A, 100 mΩ November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features 15.6 A, 100 V, RDS(on) = 100 mΩ (Max.) @ VGS = 10 V Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) 100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) - Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) S FQD19N10LTM 100 15.6 9.8 62.4 ± 20 220 15.6 5.0 6.0 2.5 50 0.4 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W W/°C °C °C Thermal Characteristics Symbol ...