FQB6N90 / FQI6N90
December 2000
QFET
FQB6N90 / FQI6N90
900V N-Channel MOSFET
General Description
These N-Channel enhan...
FQB6N90 / FQI6N90
December 2000
QFET
FQB6N90 / FQI6N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switch mode power supplies.
TM
Features
5.8A, 900V, RDS(on) = 1.9Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
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G
S
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D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB6N90 / FQI6N90 900 5.8 3.7 23.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
712 5.8 16.7 4.0 3.13 167 1.34 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from...