FQB6N40C

FQB6N40C — N-Channel QFET® MOSFET FQB6N40C N-Channel QFET® MOSFET 400 V, 6 A, 1.0 Ω November 2013 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. Features 6 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A Low Gate Charge (Typ. 16nC) Low Crss (Typ. 15pF) 100% Avalanche Tested D D G S D2-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQB6N40CTM 400 6 3.6 24 ± 30 270 6 7.3 4.5 73 0.58 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Thermal Characteristics Symbol Parameter ...