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FQB4P40 Dataheets PDF



Part Number FQB4P40
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 400V P-Channel MOSFET
Datasheet FQB4P40 DatasheetFQB4P40 Datasheet (PDF)

FQB4P40 / FQI4P40 August 2000 QFET FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based o.

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FQB4P40 / FQI4P40 August 2000 QFET FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. TM Features • • • • • • -3.5A, -400V, RDS(on) = 3.1Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S ! ● ● G! G S ▶ ▲ ● D2-PAK FQB Series G D S I2-PAK FQI Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB4P40 / FQI4P40 -400 -3.5 -2.2 -14 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 260 -3.5 8.5 -4.5 3.13 85 0.68 -55 to +150 300 TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 1.47 40 62.5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQB4P40 / FQI4P40 Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -400 V, VGS = 0 V VDS = -320 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -400 ------0.36 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -1.75 A VDS = -50 V, ID = -1.75 A (Note 4) -3.0 --- -2.44 2.7 -5.0 3.1 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---520 80 11 680 105 15 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -200 V, ID = -3.5 A, RG = 25 Ω (Note 4, 5) -------- 13 55 35 37 18 3.8 9.4 35 120 80 85 23 --- ns ns ns ns nC nC nC VDS = -320 V, ID = -3.5 A, VGS = -10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -3.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -3.5 A, dIF / dt = 100 A/µs (Note 4) ------ ---260 1.4 -3.5 -14 -5.0 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 37mH, IAS = -3.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -3.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International Rev. A, August 2000 FQB4P40 / FQI4P40 Typical Characteristics 10 1 -I D, Drain Current [A] 10 0 -I D , Drain Current [A] VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : 10 1 10 0 150℃ 25℃ -55℃ ※ Notes : 1. VDS = -50V 2. 250μ s Pulse Test 10 -1 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 10 1 RDS(on) [ Ω ], Drain-Source On-Resistance VGS = - 20V 4 -I DR , Reverse Drain Current [A] 6 VGS = - 10V 10 0 2 ※ Note : TJ = 25℃ 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0 0 3 6 9 12 10 -1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12.


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