FQB2P25 / FQI2P25
April 2000
QFET
FQB2P25 / FQI2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancem...
FQB2P25 / FQI2P25
April 2000
QFET
FQB2P25 / FQI2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
TM
Features
-2.3A, -250V, RDS(on) = 4.0Ω @VGS = -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
S
!
G! G S
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB2P25 / FQI2P25 -250 -2.3 -1.45 -9.2 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
120 -2.3 5.2 -5.5 3.13 52 0.42 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1...