FQB1P50 / FQI1P50
December 2000
QFET
FQB1P50 / FQI1P50
500V P-Channel MOSFET
General Description
These P-Channel enhan...
FQB1P50 / FQI1P50
December 2000
QFET
FQB1P50 / FQI1P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
TM
Features
-1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
S
!
● ●
G! G S
▶ ▲
●
D2-PAK
FQB Series
G D S
I2-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB1P50 / FQI1P50 -500 -1.5 -0.95 -6.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
110 -1.5 6.3 -4.5 3.13 63 0.51 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperat...