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FQB13N50

Part Number	FQB13N50
Manufacturer	Fairchild Semiconductor
Description	500V N-Channel MOSFET
Published	Apr 1, 2005
Detailed Description	FQB13N50 / FQI13N50 March 2001 QFET FQB13N50 / FQI13N50 500V N-Channel MOSFET General Description These N-Channel enha...
Datasheet	FQB13N50 PDF File

Overview

FQB13N50 / FQI13N50 March 2001 QFET FQB13N50 / FQI13N50 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on half bridge.
D TM Features • • • • • • 12.
5A, 500V.
RDS(on) = 0.
43Ω @VGS = 10 V Low gate charge ( typical 45 nC).
Low Crss ( typ...

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