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FQAF7N90

Fairchild Semiconductor
Part Number FQAF7N90
Manufacturer Fairchild Semiconductor
Description 900V N-Channel MOSFET
Published Apr 1, 2005
Detailed Description FQAF7N90 March 2001 QFET FQAF7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power fie...
Datasheet PDF File FQAF7N90 PDF File

FQAF7N90
FQAF7N90

Overview
FQAF7N90 March 2001 QFET FQAF7N90 900V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
.
TM Features • • • • • • 5.
2A, 900V, RDS(on) = 1.
55Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● ...


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