FQAF19N60

FQAF19N60 April 2000 QFET FQAF19N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features 11.2A, 600V, RDS(on) = 0.38 Ω @ VGS = 10 V Low gate charge ( typical 70 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQAF19N60 600 11.2 7.0 44.8 ±
30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V
ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 1150 11.2 12 4.5 120 0.96 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resist...