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FQA47P06 Dataheets PDF



Part Number FQA47P06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V P-Channel MOSFET
Datasheet FQA47P06 DatasheetFQA47P06 Datasheet (PDF)

FQA47P06 May 2001 QFET FQA47P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC.

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FQA47P06 May 2001 QFET FQA47P06 60V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. TM Features • • • • • • • -55A, -60V, RDS(on) = 0.026Ω @VGS = -10 V Low gate charge ( typical 84 nC) Low Crss ( typical 320 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating S ! ● ● G! ▶ ▲ ● G DS TO-3P FQA Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA47P06 -60 -55 -38.9 -220 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 820 -55 21.4 -7.0 214 1.43 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.7 -40 Units °C/W °C/W °C/W ©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001 FQA47P06 Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.06 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -27.5 A VDS = -30 V, ID = -27.5 A (Note 4) -2.0 --- -0.021 22 -4.0 0.026 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---2800 1300 320 3600 1700 420 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -48 V, ID = -47 A, VGS = -10 V (Note 4, 5) VDD = -30 V, ID = -23.5 A, RG = 25 Ω (Note 4, 5) -------- 50 450 100 195 84 18 44 110 910 210 400 110 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -55 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -47 A, dIF / dt = 100 A/µs (Note 4) ------ ---130 0.55 -55 -220 -4.0 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.315mH, IAS = -55A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -47A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation Rev. A2. May 2001 FQA47P06 Typical Characteristics 10 2 -I D , Drain Current [A] -I D, Drain Current [A] VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top : 10 2 10 1 175℃ 10 1 10 0 25℃ -55℃ ※ Notes : 1. VDS = -30V 2. 250μ s Pulse Test 10 0 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 0 1 10 -1 10 10 10 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.10 10 2 RDS(on) [ Ω ], Drain-Source On-Resistance 0.08 0.06 VGS = - 10V -I DR , Reverse Drain Current [A] 10 1 0.04 VGS = - 20V 10 0 0.02 ※ Note : TJ = 25℃ 175℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0.00 0 100 200 300 400 10 -1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Var.


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