FQA28N50 — N-Channel QFET® MOSFET
FQA28N50
N-Channel QFET® MOSFET
500 V, 28.4 A, 160 mΩ
Features
• 28.4 A, 500 V, RDS(o...
FQA28N50 — N-Channel QFET® MOSFET
FQA28N50
N-Channel QFET® MOSFET
500 V, 28.4 A, 160 mΩ
Features
28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID = 14.2 A
Low Gate Charge (Typ. 110 nC) Low Crss (Typ. 60 pF) 100% Avalanche Tested RoHS compliant
August 2014
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
D
G DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink The...