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FQA160N08 Dataheets PDF



Part Number FQA160N08
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 80V N-Channel MOSFET
Datasheet FQA160N08 DatasheetFQA160N08 Datasheet (PDF)

FQA160N08 September 2000 QFET FQA160N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, .

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FQA160N08 September 2000 QFET FQA160N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features • • • • • • • 160A, 80V, RDS(on) = 0.007Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 530 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA160N08 80 160 113 640 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 1600 160 37.5 6.5 375 2.5 -55 to +175 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.4 -40 Units °C/W °C/W °C/W ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQA160N08 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V VDS = 64 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 80 ------0.08 ------1 10 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 80 A VDS = 30 V, ID = 80 A (Note 4) 2.0 --- -0.0056 92 4.0 0.007 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---6100 2400 530 7900 3100 690 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 64 V, ID = 160 A, VGS = 10 V (Note 4, 5) VDD = 40 V, ID = 160 A, RG = 25 Ω (Note 4, 5) -------- 85 970 260 410 225 43 120 180 2000 530 830 290 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 160 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 160 A, dIF / dt = 100 A/µs (Note 4) (Note 6) ------ ---125 510 160 640 1.5 --- A A V ns nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.086mH, IAS = 160A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 160A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package ©2000 Fairchild Semiconductor International Rev. A, September 2000 FQA160N08 Typical Characteristics ID, Drain Current [A] 10 2 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 2 10 1 175℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 25℃ 10 0 -55℃ 10 1 ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 RDS(ON) [mΩ ], Drain-Source On-Resistance VGS = 10V VGS = 20V 10 IDR, Reverse Drain Current [A] 15 10 2 10 1 5 ※ Note : TJ = 25℃ 10 0 175℃ -1 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0 0 200 400 600 800 1000 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and T.


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