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FQA13N80
800V N-Channel MOSFET
Description
FQA13N80 800V N-Channel MOSFET FQA13N80 800V N-Channel MOSFET Features 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V Low gate charge ( typical 68 nC) Low Crss ( typical 30pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 QFET ® Description These N-Channel enhancement mode power field effect
transistor
s are produced us...
Fairchild Semiconductor
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