FPN560 / FPN560A
FPN560 FPN560A
C
TO-226
B E
NPN Low Saturation Transistor
These devices are designed for high curre...
FPN560 / FPN560A
FPN560 FPN560A
C
TO-226
B E
NPN Low Saturation
Transistor
These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
60 80 5.0 3.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
FPN560 / FPN560A 1.0 50 125
Units
W °C/W °C/W
1999 Fairchild Semiconductor Corporation
FPN560 / FPN560A
NPN Low Saturation
Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Curr...