Document
FPN330 / FPN330A
FPN330 FPN330A
C
TO-226
B E
NPN Low Saturation Transistor
These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
30 50 5.0 3.0 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
FPN330 / FPN330A 1.0 50 125
Units
W °C/W °C/W
1999 Fairchild Semiconductor Corporation
FPN330 / FPN330A
NPN Low Saturation Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100°C VEB = 4.0 V, IC = 0 30 50 5.0 100 10 100 V V V nA µA nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = 100 mA, VCE = 2.0 V IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V IC = 1.0 A, IB = 100 mA IC = 2.0 A, IB = 200 mA IC = 1.0 A, IB = 100 mA IC = 1.0 A, VCE = 2.0 V 330 330A 100 250 120 50 500 450 1.0 1.25 1.0 mV mV V V V
VCE(sat)
Collector-Emitter Saturation Voltage
330 330A
VBE(sat) VBE(on)
Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Cobo FT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1.0 MHz IC = 100 mA, VCE = 5.0 V, f = 100 MHz 100 30 pF MHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FPN330 / FPN330A
NPN Low Saturation Transistor
(continued)
Typical Characteristics
VBESAT-BASE-EMITTER SATURATION VOLTAGE(V)
1.6 1.4 1.2 1 0.8 0.6
VBEON- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
β = 10
Base-Emitter On Voltage vs Collector Current
1.4
Vce = 2.0V
1.2 1
- 40 ° C
- 40 °C
0.8 0.6 0.4 0.2 0.0001
25 ° C
25 °C 125 °C
0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10
125 ° C
0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A)
10
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Collector-Emitter Saturation Voltage vs Collector Current
1.2 1
25° C
Input/Output Capacitance vs Reverse Bias Voltage
120
f = 1.0MHz
β = 10
100 CAPACITANCE (pf)
C ibo
0.8
125° C
80 60 40
Cobo
0.6 0.4
- 40° C
0.2 0 0.001
20 0 0.1
0.01 0.1 1 I C- COLLECTOR CURRENT (A)
10
0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V)
50
100
Current Gain vs Collector Current
800 700
125° C Vce = 2.0V
Power Dissipation vs Ambient Temperature
PD - POWER DIS SIPATION (W) 1
H FE - CURRENT GAIN
TO-226
0.75
600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10
25° C
0.5
- 40° C
0.25
0
0
25
50 75 100 TEMPERATURE ( °C)
125
150
TRADEMARKS
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ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST
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SyncFET™ TinyLogic™ UHC™ VCX™
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