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FPN330A Dataheets PDF



Part Number FPN330A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Low Saturation Transistor
Datasheet FPN330A DatasheetFPN330A Datasheet (PDF)

FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 30 50 5.0 3.0 -55 to +150 Units V V V A °C Operating and.

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FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 30 50 5.0 3.0 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max FPN330 / FPN330A 1.0 50 125 Units W °C/W °C/W  1999 Fairchild Semiconductor Corporation FPN330 / FPN330A NPN Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 100°C VEB = 4.0 V, IC = 0 30 50 5.0 100 10 100 V V V nA µA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2.0 V IC = 1.0 A, VCE = 2.0 V IC = 2.0 A, VCE = 2.0 V IC = 1.0 A, IB = 100 mA IC = 2.0 A, IB = 200 mA IC = 1.0 A, IB = 100 mA IC = 1.0 A, VCE = 2.0 V 330 330A 100 250 120 50 500 450 1.0 1.25 1.0 mV mV V V V VCE(sat) Collector-Emitter Saturation Voltage 330 330A VBE(sat) VBE(on) Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Cobo FT Output Capacitance Transition Frequency VCB = 10 V, IE = 0, f = 1.0 MHz IC = 100 mA, VCE = 5.0 V, f = 100 MHz 100 30 pF MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FPN330 / FPN330A NPN Low Saturation Transistor (continued) Typical Characteristics VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) 1.6 1.4 1.2 1 0.8 0.6 VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current β = 10 Base-Emitter On Voltage vs Collector Current 1.4 Vce = 2.0V 1.2 1 - 40 ° C - 40 °C 0.8 0.6 0.4 0.2 0.0001 25 ° C 25 °C 125 °C 0.4 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 125 ° C 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current 1.2 1 25° C Input/Output Capacitance vs Reverse Bias Voltage 120 f = 1.0MHz β = 10 100 CAPACITANCE (pf) C ibo 0.8 125° C 80 60 40 Cobo 0.6 0.4 - 40° C 0.2 0 0.001 20 0 0.1 0.01 0.1 1 I C- COLLECTOR CURRENT (A) 10 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Current Gain vs Collector Current 800 700 125° C Vce = 2.0V Power Dissipation vs Ambient Temperature PD - POWER DIS SIPATION (W) 1 H FE - CURRENT GAIN TO-226 0.75 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 25° C 0.5 - 40° C 0.25 0 0 25 50 75 100 TEMPERATURE ( °C) 125 150 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect.


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