FP401

Ordering number:EN4632 FP401 N-Channel MOS Silicon FET Very High-Speed Switching Applications Features · Low ON resistance. · Very high-speed switching. · Composite type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting. Electrical Connection 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain (Top view) 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain SANYO:PCP5 (Bottom view) Package Dimensions unit:mm 2102A [FP401] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD PT Tch Tstg PW≤10µs, duty cycle ≤1% Tc=25˚C, 1 unit Mounted on ceramic board (250mm2×0.8mm) 1 unit Mounted on ceramic board (250mm2×0.8mm) Conditions Ratings 250 ±20 400 1.6 2.0 0.8 1.1 150 –55 to +150 Unit V V mA A W W W ˚C ˚C Electrical Characteristics at Ta=25˚C Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf VSD ID=1mA, VGS=0 VDS=250V, VGS=0 VGS=±18V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=20...