FP303

Ordering number:EN4657 FP303 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting. · The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package. Package Dimensions unit:mm 2099A [FP303] 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 50 55 500 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (250mm2×0.8mm) 60 50 6 2 4 400 0.8 150 –55 to +150 V V V A A mA W ˚C ˚C Symbol Conditions Ratings Unit Electrical Connection 1:Base 2:Collector 3:Emitter Common 4:Cathode 5:Anode 6:Cathode 7:Collector (Top View) Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/N2394TS (KOTO) B8-0025 No.4...