Ordering number:EN4657
FP303
TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode
DC-DC Converter App...
Ordering number:EN4657
FP303
TR:
NPN Epitaxial Planar Silicon
Transistor SBD:
Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with
NPN transistor and Schottoky barrier diode facilitates high-density mounting. · The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package.
Package Dimensions
unit:mm 2099A
[FP303]
1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 50 55 500 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (250mm2×0.8mm) 60 50 6 2 4 400 0.8 150 –55 to +150 V V V A A mA W ˚C ˚C Symbol Conditions Ratings Unit
Electrical Connection
1:Base 2:Collector 3:Emitter Common 4:Cathode 5:Anode 6:Cathode 7:Collector (Top View)
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SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/N2394TS (KOTO) B8-0025 No.4...