FP301

Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Composite type with 2 devices (NPN transistor and Schottoky barrier diode) contained in one package, facilitating high-density mounting. · The FP301 is formed with a chip being equivalent to the 2SD1621 and a chip being equivalent to the SB07-03C placed in one package. Package Dimensions unit:mm 2099A [FP301] 1:Base 2, 7:Collector 3:Emitter Common 4, 6:Collector 5:Base SANYO:PCP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5 –55 to +125 –55 to +125 V V mA A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Mounted on ceramic board (250mm2×0.8mm) 30 25 6 2 5 400 0.8 150 V V V A A mA W ˚C Symbol Conditions Ratings Unit Electrical Connection 1:Base 2, 7:Collector 3:Emitter Common 4, 6:Collector 5:Base (Top view) Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/53094TH (KOTO) BX-0215 No...