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FP212L100-22

Siemens Semiconductor Group

Differential Magnetoresistive Sensor

Differential Magnetoresistive Sensor FP 212 L 100-22 Features • • • • • High output voltage High operating temperature...


Siemens Semiconductor Group

FP212L100-22

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Description
Differential Magnetoresistive Sensor FP 212 L 100-22 Features High output voltage High operating temperature Robust plastic housing Biasing magnet build in Signal amplitude is speed independent Marking silver Typical applications Detection of speed Detection of position Detection of sense of rotation Angle encoder Linear position sensing Dimensions in mm Type FP 212 L 100-22 Ordering Code Q65212-L1004 The differential magnetoresistive sensor FP 212 L 100-22 consists of two series coupled magneto resistors (L-type InSb/NiSb semiconductor resistors whose value can be magnetically controlled) which are mounted onto an insulated ferrite substrate. The sensor is encapsulated in a plastic package and has three connecting terminals. The basic resistance of the total system is 2×100 Ω. A permanent magnet which supplies a biasing magnetic field is fixed on the base of the sensor. Semiconductor Group 1 07.96 FP 212 L 100-22 Maximum ratings Parameter Operating temperature Storage temperature Power dissipation1) Supply voltage2) Insulation voltage between terminals and magnet Thermal conductivity (when soldered) Characteristics (TA = 25 °C) Nominal supply voltage Total resistance, (δ = ∞, I ≤ 1 mA) Center symmetry3) (δ = ∞) Offset (at VIN N and δ = ∞) Open circuit output voltage5) (VIN N and δ = 0.2 mm) Cut-off frequency Measuring arrangements By approaching a soft iron part close to the sensor a change in its resistance is obtained. The potential divider ci...




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