FP210L100-22

Differential Magnetoresistive Sensor FP 210 L 100-22 Features High operating temperature High output voltage Robust cylindrical housing Biasing magnet build in Signal amplitude independent of speed Easily connectable Typical applications Detection of speed Detection of position Detection of sense of rotation Angle encoder Linear position sensing Dimensions in mm Type FP 210 L 100-22 Ordering Code Q65210-L100-W4 The differential magnetoresistive sensor FP 210 L 100-22 consists of two series coupled L-type InSb/NiSb semiconductor resistors. The resistance value of the MRs, which are mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor is encapsulated in a plastic package with three in-line contacts extending from the base. The basic resistance of the total system in the unbiased state is 2×100 Ω. A permanent magnet which supplies a biasing magnetic field is built into the housing. Semiconductor Group 1 07.96 FP 210 L 100-22 Maximum ratings Parameter Operating temperature Storage temperature Power dissipation1) Supply voltage2) Insulation voltage between terminals and casing Thermal conductivity Characteristics (TA = 25 °C) Nominal supply voltage Total resistance, (δ = ∞, I ≤ 1 mA) Center symmetry3) (δ = ∞) Offset voltage4) (at VIN N and δ = ∞) Open circuit output voltage5) (VIN N and δ = 0.2 mm) Cut-off frequency Measuring arrangements By approaching a soft iron part close to the sensor a change in its resistanc...